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IPB017N06N3GATMA1 - Infineon

Description: MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3

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IPB017N06N3GATMA1 - Infineon PCB footprint - Other - Other - IPB017N06N3GATMA1-2
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IPB017N06N3GATMA1 Details

  • Manufacturer Part Number:

    IPB017N06N3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-263

  • Package Description:

    GREEN, PLASTIC, TO-263, D2PAK-7

  • Pin Count:

    7

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    634 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    720 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB017N06N3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB017N06N3GATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPB017N06N3GATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, IPB017N06N3GATMA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
  • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding overcurrent protection using a fuse or a current sense resistor.

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