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IPB031N08N5 - Infineon

Description: MOSFETs N-Ch 80V 120A D2PAK-2

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IPB031N08N5 - Infineon PCB footprint - Other - Other - PG-TO 263-3_2025-1
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IPB031N08N5 Details

  • Manufacturer Part Number:

    IPB031N08N5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    186 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB031N08N5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB031N08N5 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • Proper cooling is crucial for the IPB031N08N5. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The heat sink should be designed to dissipate heat efficiently, and the system should provide adequate airflow to prevent overheating.
  • For optimal performance and reliability, follow Infineon's recommended PCB layout guidelines, including using a solid ground plane, minimizing track lengths, and using a Kelvin connection for the source pin. Additionally, ensure proper decoupling and bypassing of the device.
  • Handle the IPB031N08N5 with care to prevent ESD damage. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or exposed internal components, and use ESD-protective packaging and storage materials.
  • The recommended gate drive circuits and components for IPB031N08N5 depend on the specific application and requirements. However, as a general guideline, use a gate driver with a high current capability and a low output impedance. Choose components with a high voltage rating and a low equivalent series resistance (ESR) to minimize losses and ensure reliable operation.

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IPB031N08N5 Overview

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