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IPB037N06N3GATMA1 - Infineon

Description: N-Channel 60 V 90A (Tc) 188W (Tc) Surface Mount PG-TO263-3

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IPB037N06N3GATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3_2024-8
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IPB037N06N3GATMA1 Details

  • Manufacturer Part Number:

    IPB037N06N3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    GREEN, PLASTIC, TO-263, D2PAK-3

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia, Mexico

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    165 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB037N06N3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB037N06N3GATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections close together, and use a ground plane to reduce inductance.
  • Use a voltage clamp or transient voltage suppressor (TVS) to protect against overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended gate resistor value depends on the specific application and gate driver used. A typical value is 10-22 ohms, but consult the gate driver datasheet and application notes for specific guidance.

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IPB037N06N3GATMA1 Overview

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