IPB042N10N3GE8187ATMA1 - Infineon

IPB042N10N3GE8187ATMA1 Details

• Manufacturer Part Number:

  IPB042N10N3GE8187ATMA1

• Pbfree Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  TO-263, D2PAK-3

• Country Of Origin:

  Malaysia, Mexico

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  340 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  100 A

• Drain-source On Resistance-Max:

  0.0042 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  400 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON