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IPB049N08N5ATMA1 - Infineon

Description: MOSFET N-Ch 80V 80A D2PAK-2

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IPB049N08N5ATMA1 - Infineon PCB footprint - Other - Other - IPB049N08N5ATMA1-2
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IPB049N08N5ATMA1 Details

  • Manufacturer Part Number:

    IPB049N08N5ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-263, D2PAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    84 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB049N08N5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB049N08N5ATMA1 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V and 10V, and the drain-source voltage (Vds) should be within the recommended operating range.
  • A good PCB layout should include a solid ground plane, short and wide traces, and a thermal pad for heat dissipation. Thermal management should include a heat sink or thermal interface material to keep the junction temperature below 175°C.
  • To protect the MOSFET from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection components such as TVS diodes or ESD protection arrays.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω and 100Ω to limit the gate current and prevent oscillations.

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