Part Image

IPB054N08N3GATMA1 - Infineon

Description: MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3

Download IPB054N08N3GATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPB054N08N3GATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3 (D²-Pak)
click to zoom
3D Models
IPB054N08N3GATMA1 - Infineon  - 3D model - Other - PG-TO263-3 (D²-Pak)
click to zoom

IPB054N08N3GATMA1 Details

  • Manufacturer Part Number:

    IPB054N08N3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    GREEN, PLASTIC, TO-263, D2PAK-3

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB054N08N3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB054N08N3GATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPB054N08N3GATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, IPB054N08N3GATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPB054N08N3GATMA1 Overview

Use the download button to access the IPB054N08N3GATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPB05, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPB054N08N3GATMA1

Showing 0 results