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IPB057N06N - Infineon

Description: Infineon IPB057N06N N-channel MOSFET Transistor, 45 A, Minimum of 60 V, 3-Pin TO-263

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IPB057N06N - Infineon PCB footprint - Other - Other - IPB057N06N-1
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IPB057N06N Details

  • Manufacturer Part Number:

    IPB057N06N

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    GREEN, PLASTIC, TO-263, 3/2 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB057N06N Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB057N06N is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • Proper cooling is crucial for the IPB057N06N. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 150W for IPB057N06N.
  • For optimal performance and to minimize electromagnetic interference (EMI), follow these PCB layout guidelines: keep the power stage components close to the device, use a solid ground plane, and minimize the length of the drain and source connections. Additionally, ensure the PCB is designed to handle the high currents and voltages associated with the IPB057N06N.
  • To protect the IPB057N06N from overvoltage and overcurrent, use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider adding external protection components such as TVS diodes or zener diodes to the circuit.
  • The recommended gate drive voltage for IPB057N06N is between 10V and 15V, with a maximum gate-source voltage of ±20V. Using a gate drive voltage within this range ensures proper device operation and minimizes the risk of damage or malfunction.

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IPB057N06N Overview

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