Part Image

IPB057N06NATMA1 - Infineon

Description: IPB057N06NATMA1 N-Channel MOSFET, 45 A, 60 V OptiMOS 5, 3-Pin D2PAK Infineon

Download IPB057N06NATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPB057N06NATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3_FFW
click to zoom
3D Models
IPB057N06NATMA1 - Infineon  - 3D model - Other - PG-TO263-3_FFW
click to zoom

IPB057N06NATMA1 Details

  • Manufacturer Part Number:

    IPB057N06NATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    GREEN, PLASTIC, TO-263, 3/2 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB057N06NATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB057N06NATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPB057N06NATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, IPB057N06NATMA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
  • Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPB057N06NATMA1 Overview

Use the download button to access the IPB057N06NATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPB05, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPB057N06NATMA1

Showing 0 results