Part Image

IPB083N10N3GXT - Infineon

Description: Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel

Download IPB083N10N3GXT Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPB083N10N3GXT - Infineon PCB footprint - Other - Other - IPB083N10N3GXT-1 (PG-TO263-3)
click to zoom

IPB083N10N3GXT Details

  • Manufacturer Part Number:

    IPB083N10N3GXT

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TO-263, D2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0083 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB083N10N3GXT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB083N10N3GXT is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • Proper cooling is crucial for the device's reliability and performance. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The device's thermal resistance (Rth) is specified in the datasheet, and you can use this value to calculate the required heat sink size and thermal interface material.
  • The recommended gate drive voltage for IPB083N10N3GXT is 10-15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • To protect the device from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuit. The device has an internal protection diode, but it's not designed to handle high-energy surges. Consider using external protection devices, such as TVS diodes or surge arresters, to ensure the device's reliability.
  • The recommended PCB layout and design considerations for IPB083N10N3GXT include using a multi-layer PCB with a solid ground plane, keeping the device's pins as short as possible, and using a Kelvin connection for the gate driver. Consult the datasheet and application notes for more information on PCB design and layout guidelines.

Trust Checks

This model has been verified by system checks.
System Verified
Sponsored

IPB083N10N3GXT Overview

Use the download button to access the IPB083N10N3GXT schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IPB08, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPB083N10N3GXT

Showing 0 results