IPB110N20N3LFATMA1 - Infineon

IPB110N20N3LFATMA1 Details

• Manufacturer Part Number:

  IPB110N20N3LFATMA1

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• Package Description:

  TO-263, D2PAK-3/2

• Country Of Origin:

  Germany, Malaysia

• ECCN Code:

  EAR99

• Factory Lead Time:

  16 Weeks

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  560 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  200 V

• Drain Current-Max (ID):

  11 A

• Drain-source On Resistance-Max:

  0.011 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  352 A

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Element Material:

  SILICON