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IPB120N04S402ATMA1 - Infineon

Description: MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2

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IPB120N04S402ATMA1 - Infineon PCB footprint - Other - Other - IPB120N04S402ATMA1-4
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IPB120N04S402ATMA1 - Infineon  - 3D model - Other - IPB120N04S402ATMA1-4
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IPB120N04S402ATMA1 Details

  • Manufacturer Part Number:

    IPB120N04S402ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    480 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB120N04S402ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB120N04S402ATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate-source voltage (Vgs) is within the recommended range (typically 10-15V), and use a gate driver with a low output impedance to reduce ringing and oscillations.
  • For optimal thermal performance, use a PCB with a solid copper plane for heat dissipation, and ensure good thermal conductivity between the MOSFET and the heat sink. A thermal interface material (TIM) can be used to improve heat transfer.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current, and implement a shutdown mechanism to prevent damage.
  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it may need to be adjusted based on the specific requirements of the design.

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