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IPB120N06S4-02 - Infineon

Description: Infineon IPB120N06S4-02 N-channel MOSFET Transistor, 120 A, 60 V, 3-Pin TO-263

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PCB Footprints
IPB120N06S4-02 - Infineon PCB footprint - Other - Other - PG-TO263-3_FFW
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3D Models
IPB120N06S4-02 - Infineon  - 3D model - Other - PG-TO263-3_FFW
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IPB120N06S4-02 Details

  • Manufacturer Part Number:

    IPB120N06S4-02

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB120N06S4-02 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for optimal thermal performance in their application note AN2013-03. It suggests using a thermal pad on the bottom side of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • Infineon recommends following the soldering guidelines outlined in their application note AN2013-01, which includes using a soldering temperature of 260°C (max) and a soldering time of 10 seconds (max) to prevent damage to the device.
  • Although the datasheet specifies a maximum gate-source voltage of ±20V, it's recommended to limit the gate voltage to ±15V to ensure reliable operation and prevent damage to the device.
  • Infineon recommends following standard ESD protection procedures, such as using an ESD wrist strap or mat, and handling the devices in a controlled environment to prevent ESD damage.
  • The recommended gate resistor value depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10Ω and 100Ω is suitable for most applications. However, it's recommended to consult the application note AN2013-02 for more detailed guidance.

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