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IPB120N06S4H1ATMA2 - Infineon

Description: MOSFET N-Ch 60V 120A D2PAK-2

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IPB120N06S4H1ATMA2 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_2_2020
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IPB120N06S4H1ATMA2 Details

  • Manufacturer Part Number:

    IPB120N06S4H1ATMA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    GREEN

  • Avalanche Energy Rating (Eas):

    1060 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0021 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB120N06S4H1ATMA2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPB120N06S4H1ATMA2 is 150°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
  • The maximum current rating of the IPB120N06S4H1ATMA2 is 120A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.
  • To protect the IPB120N06S4H1ATMA2 from overvoltage and overcurrent, consider using a voltage regulator or a surge protector, and implement overcurrent protection using a fuse or a current-sensing resistor.
  • The recommended gate drive voltage for the IPB120N06S4H1ATMA2 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and requirements.

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