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IPB120N10S403ATMA1 - Infineon

Description: MOSFET N-CHANNEL 100+

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IPB120N10S403ATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_3
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IPB120N10S403ATMA1 Details

  • Manufacturer Part Number:

    IPB120N10S403ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    770 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    300 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB120N10S403ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB120N10S403ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IPB120N10S403ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPB120N10S403ATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuits are properly synchronized.
  • The maximum allowable voltage transient for IPB120N10S403ATMA1 is ±10% of the maximum rated voltage (1200 V).

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