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IPB120P04P4L03ATMA1 - Infineon

Description: IPB120P04P4L03ATMA1 P-Channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon

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IPB120P04P4L03ATMA1 - Infineon - PCB symbol
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PCB Footprints
IPB120P04P4L03ATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_1
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IPB120P04P4L03ATMA1 - Infineon - 3D model - Other - PG-TO263-3-2_1
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IPB120P04P4L03ATMA1 Details

  • Manufacturer Part Number:

    IPB120P04P4L03ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TO-263, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    78 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB120P04P4L03ATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IPB120P04P4L03ATMA1 is a 5x5mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions, ensure proper thermal management, and consider using a thermal interface material (TIM) to improve heat dissipation.
  • The maximum allowed voltage on the input pins of IPB120P04P4L03ATMA1 is 5.5V. Exceeding this voltage may damage the device.
  • Yes, IPB120P04P4L03ATMA1 is suitable for battery-powered devices due to its low quiescent current and low dropout voltage. However, ensure that the device is properly powered down when not in use to minimize power consumption.
  • To troubleshoot issues with IPB120P04P4L03ATMA1, check the input voltage, output voltage, and current consumption. Verify that the device is properly soldered and that the PCB layout meets the recommended guidelines.

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IPB120P04P4L03ATMA1 Overview

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Part Image IPB120P04P4L-03 Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB