Part Image

IPB120P04P4L03ATMA2 - Infineon

Description: Power MOSFET Transistor

Download IPB120P04P4L03ATMA2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPB120P04P4L03ATMA2 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_
click to zoom
3D Models
IPB120P04P4L03ATMA2 - Infineon  - 3D model - Other - PG-TO263-3-2_
click to zoom

IPB120P04P4L03ATMA2 Details

  • Manufacturer Part Number:

    IPB120P04P4L03ATMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    78 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    270 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB120P04P4L03ATMA2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IPB120P04P4L03ATMA2 is a 5x5mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions, ensure proper thermal management, and consider using a thermal interface material (TIM) to improve heat dissipation.
  • The maximum allowed voltage on the VIN pin of IPB120P04P4L03ATMA2 is 28V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, IPB120P04P4L03ATMA2 is suitable for battery-powered devices due to its low quiescent current and high efficiency. However, ensure that the device is properly configured to minimize power consumption during standby modes.
  • To troubleshoot issues with IPB120P04P4L03ATMA2, check the input voltage, output voltage, and current consumption. Verify that the device is properly configured and that the PCB layout meets the recommended guidelines. Consult the datasheet and application notes for troubleshooting guidance.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPB120P04P4L03ATMA2 Overview

Use the download button to access the IPB120P04P4L03ATMA2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPB12, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPB120P04P4L03ATMA2

Showing 0 results

IPB120P04P4L03ATMA2 Alternates

Showing results

Image Part Number Model
Part Image IPB120P04P4L-03 Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB120P04P4L03ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB