IPB180N06S4-H1 - Infineon

IPB180N06S4-H1 Details

• Manufacturer Part Number:

  IPB180N06S4-H1

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  TO-263

• Pin Count:

  3

• Country Of Origin:

  Malaysia

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  700 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  60 V

• Drain Current-Max (ID):

  180 A

• Drain-source On Resistance-Max:

  0.0017 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-263

• JESD-30 Code:

  R-PSSO-G6

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  6

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  250 W

• Pulsed Drain Current-Max (IDM):

  720 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Element Material:

  SILICON