IPB180N08S4-02 footprint, schematic symbol and 3D model by Infineon

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PCB Footprints

IPB180N08S4-02 - Infineon PCB footprint - Other - Other - PG-TO263-7_4

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Datasheet Download Datasheet
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Part Number IPB180N08S4-02
Manufacturer Infineon
Pin Count 7
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PG-TO263-7_4
Released Date Nov 15, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

IPB180N08S4-02 Details

Manufacturer Part Number:
IPB180N08S4-02
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
ECCN Code:
EAR99
Manufacturer:
Infineon Technologies AG
YTEOL:
0
Additional Feature:
ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas):
640 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
80 V
Drain Current-Max (ID):
180 A
Drain-source On Resistance-Max:
0.0022 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-263
JESD-30 Code:
R-PSSO-G6
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
720 A
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Element Material:
SILICON

IPB180N08S4-02 Frequently Asked Questions (FAQs)

The recommended PCB footprint for IPB180N08S4-02 is a TO-220 Full Pack footprint with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 4.5mm x 4.5mm.
To ensure reliability in high-temperature applications, it is recommended to follow the thermal design guidelines provided in the datasheet, including using a suitable heat sink and ensuring good thermal conductivity between the device and the heat sink.
The maximum allowed voltage spike for IPB180N08S4-02 is 30V, as specified in the datasheet. Exceeding this voltage may damage the device.
Yes, IPB180N08S4-02 can be used in a parallel configuration to increase current handling, but it is recommended to follow the guidelines provided in the application note AN2015-01 'Parallel Connection of Power MOSFETs' to ensure proper operation and to minimize the risk of oscillations.
The recommended gate resistor value for IPB180N08S4-02 is between 10Ω and 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and ringing, while a lower value can improve switching speed.

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