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IPB45N06S4L-08 - Infineon

Description: MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2

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PCB Footprints
IPB45N06S4L-08 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_2023
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IPB45N06S4L-08 Details

  • Manufacturer Part Number:

    IPB45N06S4L-08

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    97 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    71 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB45N06S4L-08 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB45N06S4L-08 is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, which is the recommended threshold voltage. Additionally, ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • For optimal performance and thermal management, it's recommended to use a PCB layout with a large copper area for heat dissipation, keep the drain and source pins as close as possible, and use a Kelvin connection for the source pin to reduce parasitic inductance.
  • Yes, the IPB45N06S4L-08 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the MOSFET's switching losses, gate charge, and parasitic capacitances when designing the circuit.
  • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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