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IPB65R045C7 - Infineon

Description: Infineon IPB65R045C7 MOSFET Transistor

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PCB Footprints
IPB65R045C7 - Infineon PCB footprint - Other - Other - PG-TO-263 (D²-Pak)
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3D Models
IPB65R045C7 - Infineon  - 3D model - Other - PG-TO-263 (D²-Pak)
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IPB65R045C7 Details

  • Manufacturer Part Number:

    IPB65R045C7

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • Country Of Origin:

    Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    249 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    212 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB65R045C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB65R045C7 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.
  • The recommended gate resistor value for the IPB65R045C7 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPB65R045C7 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and balancing of the devices to avoid uneven current sharing.
  • To protect the IPB65R045C7 from overvoltage and overcurrent conditions, it's recommended to implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as TVS diodes and current sense resistors.

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IPB65R045C7 Overview

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Part Image IPB65R045C7ATMA2 Infineon Technologies AG

Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB