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IPB65R190CFD - Infineon

Description: Infineon IPB65R190CFD N-channel MOSFET Transistor, 17.5 A, 700 V, 3-Pin TO-263

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PCB Footprints
IPB65R190CFD - Infineon PCB footprint - Other - Other - PG-TO263-3_FFW
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IPB65R190CFD - Infineon  - 3D model - Other - PG-TO263-3_FFW
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IPB65R190CFD Details

  • Manufacturer Part Number:

    IPB65R190CFD

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    TO-263, D2PAK-3/2

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    484 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    17.5 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    57.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB65R190CFD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB65R190CFD is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.
  • The recommended gate drive voltage for the IPB65R190CFD is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the IPB65R190CFD from overvoltage and undervoltage conditions, it's recommended to use a voltage regulator or a voltage supervisor, and to implement overvoltage protection (OVP) and undervoltage protection (UVP) circuits.
  • The maximum allowed current for the IPB65R190CFD is 65A, with a maximum pulsed current of 130A.

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IPB65R190CFD Overview

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Part Image IPB65R190CFDAATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB65R190CFDATMA2 Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB65R190CFDA Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB65R190CFDATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB