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IPB65R420CFD - Infineon

Description: Infineon IPB65R420CFD N-channel MOSFET Transistor, 8.7 A, 700 V, 3-Pin TO-263

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PCB Footprints
IPB65R420CFD - Infineon PCB footprint - Other - Other - PG-TO263-3_FFW
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IPB65R420CFD - Infineon  - 3D model - Other - PG-TO263-3_FFW
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IPB65R420CFD Details

  • Manufacturer Part Number:

    IPB65R420CFD

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    TO-263, D2PAK-3

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    227 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    8.7 A

  • Drain-source On Resistance-Max:

    0.42 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB65R420CFD Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The choice of gate driver depends on the specific application requirements, such as voltage, current, and switching frequency. Infineon recommends using their EiceDRIVER gate driver family, which is optimized for their MOSFETs. The EiceDRIVER 1EDF5673B is a suitable option for the IPB65R420CFD.
  • Although the datasheet specifies a maximum VGS of ±20V, it's recommended to limit the gate-source voltage to ±15V to ensure reliable operation and prevent damage to the MOSFET.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤1.5 K/W, ensuring good thermal contact between the MOSFET and heat sink, and providing adequate airflow. The heat sink should be designed to handle the maximum power dissipation of the MOSFET.
  • The IPB65R420CFD is suitable for switching frequencies up to 100 kHz. However, the optimal frequency range depends on the specific application requirements, such as efficiency, losses, and EMI considerations.

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