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IPB65R660CFDA - Infineon

Description: MOSFET N-Ch 650V 6A D2PAK-2

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IPB65R660CFDA - Infineon PCB footprint - Other - Other - PG-TO263-3_4
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IPB65R660CFDA Details

  • Manufacturer Part Number:

    IPB65R660CFDA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.66 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    17 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB65R660CFDA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB65R660CFDA is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The datasheet provides thermal resistance values, which can be used to calculate the required heat sink size and thermal interface material. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the IPB65R660CFDA is between 10V and 15V, with a maximum gate-source voltage of 20V. Using a gate drive voltage within this range ensures proper switching and minimizes the risk of damage to the device.
  • To protect the IPB65R660CFDA from overvoltage and overcurrent conditions, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism. The OVP circuit should be designed to clamp the voltage below the maximum rated voltage, and the OCP mechanism should be able to detect and respond to overcurrent conditions within a few microseconds.
  • For optimal performance and reliability, follow the recommended PCB layout and design considerations outlined in the datasheet and application notes. These include using a solid ground plane, minimizing trace inductance, and ensuring proper decoupling and filtering of the power supply.

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