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IPB70N04S4-06 - Infineon

Description: N-channel MOSFET Module, 70 A, 40 V, 3-Pin TO-263

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IPB70N04S4-06 - Infineon PCB footprint - Other - Other - IPB70N04S4-06-2
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IPB70N04S4-06 - Infineon  - 3D model - Other - IPB70N04S4-06-2
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IPB70N04S4-06 Details

  • Manufacturer Part Number:

    IPB70N04S4-06

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    58 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB70N04S4-06 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB70N04S4-06 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 150W. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • The recommended gate drive voltage for the IPB70N04S4-06 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device. A higher gate drive voltage can improve switching performance, but it may also increase power losses.
  • Yes, the IPB70N04S4-06 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, which increase with frequency. Ensure the device is properly cooled, and the gate drive circuit is optimized for high-frequency operation.
  • To protect the IPB70N04S4-06 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to detect and respond to overcurrent conditions.

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IPB70N04S4-06 Overview

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Part Image IPB70N04S406ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB70N04S4-06 Rochester Electronics LLC

70A, 40V, 0.0062ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN