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IPB70N10SL-16 - Infineon

Description: POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 100V, 0.025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB

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IPB70N10SL-16 Details

  • Manufacturer Part Number:

    IPB70N10SL-16

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB70N10SL-16 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB70N10SL-16 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • Proper thermal management is crucial for IPB70N10SL-16. Ensure good thermal contact between the device and the heat sink, use a suitable thermal interface material, and design the heat sink to dissipate heat efficiently. Also, consider the thermal resistance of the device and the heat sink in your design.
  • The recommended gate resistor value for IPB70N10SL-16 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, IPB70N10SL-16 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive circuitry is designed to handle the parallel configuration. Consult the datasheet and application notes for more information on parallel operation.
  • The maximum allowable voltage transient for IPB70N10SL-16 is specified in the datasheet as ±10% of the maximum rated voltage. However, it's recommended to limit voltage transients to ±5% to ensure reliable operation and prevent damage to the device.

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IPB70N10SL-16 Overview

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