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IPB70P04P4-09 - Infineon

Description: Infineon IPB70P04P4-09 P-channel MOSFET Module, 72 A, -40 V, 3-Pin TO-263

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PCB Footprints
IPB70P04P4-09 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_2
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3D Models
IPB70P04P4-09 - Infineon  - 3D model - Other - PG-TO263-3-2_2
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IPB70P04P4-09 Details

  • Manufacturer Part Number:

    IPB70P04P4-09

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    72 A

  • Drain-source On Resistance-Max:

    0.0094 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    288 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB70P04P4-09 Frequently Asked Questions (FAQs)

  • The IPB70P04P4-09 can operate from -40°C to 150°C, with a maximum junction temperature of 150°C.
  • The device has a thermal pad on the bottom, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation. Additionally, the PCB design should allow for good airflow and thermal conduction.
  • The recommended gate drive voltage for the IPB70P04P4-09 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • The device has built-in overvoltage protection, but it's still recommended to use external protection circuits, such as a voltage regulator and current sense resistors, to prevent damage from overvoltage and overcurrent conditions.
  • The typical turn-on time for the IPB70P04P4-09 is around 10ns, and the typical turn-off time is around 20ns, depending on the gate drive voltage and circuit conditions.

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