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IPB80N04S3-03 - Infineon

Description: MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T

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IPB80N04S3-03 - Infineon PCB footprint - Other - Other - IPB80N04S3-03-3
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IPB80N04S3-03 Details

  • Manufacturer Part Number:

    IPB80N04S3-03

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    526 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB80N04S3-03 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB80N04S3-03 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • Proper cooling is crucial for the device's reliability and performance. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of ≤ 10 K/W. Also, follow the recommended PCB layout and thermal design guidelines in the datasheet.
  • The recommended gate drive voltage for IPB80N04S3-03 is between 10 V and 15 V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, IPB80N04S3-03 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • To protect the device from overvoltage and overcurrent, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. Also, ensure the device is operated within the specified maximum ratings and follow the recommended application guidelines in the datasheet.

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