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IPB80N04S4-04 - Infineon

Description: Infineon IPB80N04S4-04 N-channel MOSFET Transistor, 80 A, 40 V, 3-Pin TO-263

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Symbol
IPB80N04S4-04 - Infineon - PCB symbol
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PCB Footprints
IPB80N04S4-04 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_2
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3D Models
IPB80N04S4-04 - Infineon - 3D model - Other - PG-TO263-3-2_2
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IPB80N04S4-04 Details

  • Manufacturer Part Number:

    IPB80N04S4-04

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • Country Of Origin:

    Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    71 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB80N04S4-04 Frequently Asked Questions (FAQs)

  • The IPB80N04S4-04 has an operating temperature range of -40°C to 150°C, making it suitable for high-reliability applications.
  • The device has a thermal pad on the bottom for heat dissipation. Ensure good thermal contact with a heat sink or PCB thermal plane to keep the junction temperature within the recommended range.
  • The recommended gate resistor value is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
  • Yes, the IPB80N04S4-04 is designed for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate driver is capable of handling the high-frequency switching requirements.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism to prevent damage to the device. The OVP circuit should be designed to clamp the voltage below the maximum rated voltage, and the OCP mechanism should be designed to limit the current below the maximum rated current.

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IPB80N04S4-04 Overview

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