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IPB80N06S2L09ATMA2 - Infineon

Description: N-Channel 55 V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2

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IPB80N06S2L09ATMA2 Details

  • Manufacturer Part Number:

    IPB80N06S2L09ATMA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TO-263, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    370 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

IPB80N06S2L09ATMA2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IPB80N06S2L09ATMA2 is a TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the Infineon application note AN2013-03-01.
  • To ensure the reliability of IPB80N06S2L09ATMA2 in high-temperature applications, it's recommended to follow the derating guidelines provided in the datasheet, use a suitable heat sink, and ensure good thermal management. Additionally, consider using a thermistor or thermal sensor to monitor the device temperature and implement over-temperature protection.
  • Yes, IPB80N06S2L09ATMA2 is designed to handle high dv/dt in switching applications. However, it's recommended to follow the guidelines provided in the datasheet for dv/dt capability and ensure that the device is properly snubbed to prevent voltage overshoots.
  • The selection of the gate resistor for IPB80N06S2L09ATMA2 depends on the specific application requirements. As a general guideline, a gate resistor value between 1kΩ to 10kΩ is recommended. A higher gate resistor value can help reduce EMI, but may increase the turn-on time. A lower gate resistor value can help reduce the turn-on time, but may increase EMI.
  • Yes, IPB80N06S2L09ATMA2 is compatible with lead-free soldering. The device is RoHS-compliant and can be soldered using lead-free soldering processes. However, it's recommended to follow the soldering guidelines provided in the datasheet and ensure that the soldering process is within the specified temperature range.

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IPB80N06S2L09ATMA2 Overview

Use the download button to access the IPB80N06S2L09ATMA2 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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