IPB80N08S207ATMA1 footprint, schematic symbol and 3D model by Infineon

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PCB Footprints

IPB80N08S207ATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_2026-6.6

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Part Number IPB80N08S207ATMA1
Manufacturer Infineon
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PG-TO263-3-2_2026-6.6
Released Date Aug 28, 2026
Last Modified Date Aug 28, 2026 8:02 AM UTC
Pinout / Pin List Click Here (Member Only)

IPB80N08S207ATMA1 Details

Manufacturer Part Number:
IPB80N08S207ATMA1
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Austria, Malaysia
ECCN Code:
EAR99
Factory Lead Time:
9 Weeks
Manufacturer:
Infineon Technologies AG
YTEOL:
6
Avalanche Energy Rating (Eas):
810 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
75 V
Drain Current-Max (ID):
80 A
Drain-source On Resistance-Max:
0.0071 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
320 A
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Element Material:
SILICON

IPB80N08S207ATMA1 Frequently Asked Questions (FAQs)

The maximum operating temperature range for IPB80N08S207ATMA1 is -55°C to 175°C.
To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
Use a compact, symmetrical layout with short, wide traces for the drain, source, and gate connections. Minimize loop areas and use a solid ground plane to reduce inductance.
Use a voltage clamp or TVS diode to protect against overvoltage, and consider adding a current sense resistor and overcurrent protection circuitry to prevent damage from excessive current.
Ensure good thermal contact between the MOSFET and a heat sink or PCB, and consider using thermal interface materials to minimize thermal resistance. Monitor junction temperature to prevent overheating.

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