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IPB80P03P4L-07 - Infineon

Description: MOSFET P-Ch 30V 80A OptiMOS-P2 TO-263 Infineon IPB80P03P4L-07 P-channel MOSFET Transistor, 80 A, -30 V, 3-Pin TO-263

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PCB Footprints
IPB80P03P4L-07 - Infineon PCB footprint - Other - Other - PG-TO263-3_FFW
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IPB80P03P4L-07 - Infineon  - 3D model - Other - PG-TO263-3_FFW
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IPB80P03P4L-07 Details

  • Manufacturer Part Number:

    IPB80P03P4L-07

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    135 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0069 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB80P03P4L-07 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a value between 1 ohm and 10 ohm. However, it's recommended to consult Infineon's application notes and simulation tools to determine the optimal value for your specific design.
  • According to Infineon's datasheet, the maximum allowed voltage overshoot is 10% of the maximum drain-source voltage (VDS) rating, which is 80V for the IPB80P03P4L-07. However, it's recommended to minimize voltage overshoot to prevent stress on the device and ensure reliable operation.
  • To ensure EMC, follow Infineon's guidelines for PCB layout, component selection, and shielding. Additionally, consider using a common-mode choke, ferrite beads, and capacitors to filter out electromagnetic interference (EMI). It's also recommended to perform EMC testing and simulation to validate your design.
  • The recommended operating temperature range for the IPB80P03P4L-07 is -40°C to 150°C. However, the device can operate up to 175°C for short periods of time. It's essential to ensure proper thermal management and cooling to prevent overheating and ensure reliable operation.

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IPB80P03P4L-07 Overview

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Part Image IPB80P03P4L07ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 30V, 0.0069ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB