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IPB80P03P4L04ATMA2 - Infineon

Description: MOSFET MOSFET_(20V 40V)

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IPB80P03P4L04ATMA2 - Infineon PCB footprint - Other - Other - IPB80P03P4L04ATMA2-2
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IPB80P03P4L04ATMA2 Details

  • Manufacturer Part Number:

    IPB80P03P4L04ATMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-263, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    410 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    137 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB80P03P4L04ATMA2 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • When selecting a gate driver for the IPB80P03P4L04ATMA2, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using a gate driver with a output current of at least 2A and a voltage rating of 4.5V to 15V, such as the Infineon 1EDF5673B or 1EDF5674B.
  • The maximum allowed junction temperature (Tj) for the IPB80P03P4L04ATMA2 is 150°C. However, it's recommended to operate the device at a lower temperature to ensure reliability and minimize degradation over time.
  • Yes, the IPB80P03P4L04ATMA2 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductances when designing the circuit to ensure reliable operation and minimize EMI.
  • Follow the recommended soldering and mounting guidelines in the Infineon datasheet and application notes. Ensure the device is soldered using a soldering iron with a temperature of 260°C to 300°C, and use a solder with a melting point above 217°C. Also, ensure the device is properly mounted on a heat sink with a thermal interface material to minimize thermal resistance.

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IPB80P03P4L04ATMA2 Overview

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