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IPD025N06N - Infineon

Description: Infineon IPD025N06N N-channel MOSFET Transistor, 90 A, 60 V, 3-Pin TO-252

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IPD025N06N - Infineon  - 3D model
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IPD025N06N Details

  • Manufacturer Part Number:

    IPD025N06N

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD025N06N Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD025N06N is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPD025N06N is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPD025N06N is suitable for high-reliability applications, as it is designed and manufactured with high-quality materials and processes to ensure long-term reliability.
  • To protect the IPD025N06N from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.

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IPD025N06N Overview

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Part Image IPD025N06NATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 26A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA