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IPD034N06N3G - Infineon

Description: Infineon IPD034N06N3G N-channel MOSFET Transistor, 100 A, 60 V, 3-Pin TO-252

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PCB Footprints
IPD034N06N3G - Infineon PCB footprint - Other - Other - Infineon-PG-TO252-3_ffw1
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IPD034N06N3G - Infineon  - 3D model - Other - Infineon-PG-TO252-3_ffw1
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IPD034N06N3G Details

  • Manufacturer Part Number:

    IPD034N06N3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Package Description:

    GREEN, PLASTIC, TO-252, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    149 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD034N06N3G Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for optimal thermal performance in their application note AN2013-03. It suggests using a thermal pad with a minimum size of 10mm x 10mm, and placing it in the center of the device. Additionally, it recommends using multiple vias to connect the thermal pad to the internal copper layers to improve heat dissipation.
  • To ensure proper biasing during startup, it is recommended to use a soft-start circuit to slowly ramp up the gate voltage. This can be achieved using a resistor-capacitor (RC) network or a dedicated soft-start IC. Additionally, the datasheet recommends using a gate resistor with a value between 1kΩ to 10kΩ to limit the inrush current.
  • The maximum allowed voltage slew rate for the gate signal is not explicitly stated in the datasheet. However, as a general rule of thumb, it is recommended to limit the voltage slew rate to 1V/ns to 5V/ns to prevent electromagnetic interference (EMI) and ensure reliable operation.
  • Yes, the IPD034N06N3G is designed for high-frequency switching applications up to 100kHz. However, it is essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation. Infineon provides a switching loss calculator tool to help estimate the device's switching losses.
  • To protect the device from overvoltage and overcurrent conditions, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage stress. Additionally, a current sense resistor or a dedicated overcurrent protection IC can be used to detect and respond to overcurrent conditions.

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