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IPD053N08N3G - Infineon

Description: Infineon IPD053N08N3G N-channel MOSFET Transistor, 90 A, 80 V, 3-Pin TO-252

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IPD053N08N3G - Infineon PCB footprint - Other - Other - IPD053N08N3G-2
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IPD053N08N3G Details

  • Manufacturer Part Number:

    IPD053N08N3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Package Description:

    GREEN, PLASTIC, TO-252, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Germany, Malaysia, South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD053N08N3G Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for optimal thermal performance in their application note AN2013-01. It suggests using a thermal pad on the bottom side of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure proper biasing during startup, it's recommended to follow the startup sequence outlined in the datasheet. This typically involves applying a voltage to the gate driver supply (VCC) before applying a voltage to the drain-source (VDS). Additionally, a soft-start circuit can be implemented to limit the inrush current and prevent voltage spikes.
  • The maximum allowed parasitic inductance in the PCB layout depends on the specific application and switching frequency. As a general guideline, Infineon recommends keeping the parasitic inductance below 1 nH for optimal performance. This can be achieved by using a compact PCB layout, minimizing track lengths, and using a solid ground plane.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to implement a protection circuit that includes a voltage supervisor, overvoltage protection (OVP), and overcurrent protection (OCP). The protection circuit should be designed to respond quickly to fault conditions and limit the stress on the device.
  • The recommended gate resistance value for optimal switching performance depends on the specific application and switching frequency. As a general guideline, Infineon recommends a gate resistance value between 1 Ω and 10 Ω. A lower gate resistance value can result in faster switching times, but may also increase the gate driver power loss.

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