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IPD088N06N3G - Infineon

Description: Infineon IPD088N06N3G N-channel MOSFET Transistor, 50 A, 60 V, 3-Pin TO-252

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PCB Footprints
IPD088N06N3G - Infineon PCB footprint - Other - Other - PG-TO252 -3_ffw
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3D Models
IPD088N06N3G - Infineon  - 3D model - Other - PG-TO252 -3_ffw
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IPD088N06N3G Details

  • Manufacturer Part Number:

    IPD088N06N3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Package Description:

    GREEN, PLASTIC, TO-252, DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    71 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD088N06N3G Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for optimal thermal performance in their application note AN2013-01. It suggests using a thermal pad on the bottom side of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure SOA compliance, you should consider the maximum allowed voltage, current, and power dissipation of the device. You can use Infineon's SOA calculator tool or consult with their application engineers to ensure your design meets the SOA requirements.
  • The recommended gate drive voltage for IPD088N06N03G is typically between 10V to 15V, and the recommended gate current is around 1A to 2A. However, the optimal values may vary depending on the specific application and switching frequency. Consult with Infineon's application engineers or refer to their gate drive application notes for more information.
  • Infineon recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the IPD088N06N03G from electrostatic discharge. You should also follow proper handling and storage procedures to prevent ESD damage.
  • The thermal impedance (Zth) and thermal resistance (Rth) values for IPD088N06N03G can be found in the datasheet. The typical values are Zth = 1.5 K/W and Rth = 1.2 K/W. However, these values may vary depending on the specific application and PCB design.

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Part Image IPD088N06N3GBTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA