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IPD30N03S2L-20 - Infineon

Description: MOSFET N-Ch 30V 30A DPAK-2 OptiMOS Power-Transistor -55 ... +175 °C 60 W 70 mJ 31 mΩ 100 nA

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IPD30N03S2L-20 - Infineon PCB footprint - Other - Other - PG-TO252-3-11_2026-2.2
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IPD30N03S2L-20 Details

  • Manufacturer Part Number:

    IPD30N03S2L-20

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    70 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD30N03S2L-20 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD30N03S2L-20 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The recommended thermal resistance (Rth) is ≤ 1.5 K/W. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow path.
  • For optimal performance and to minimize electromagnetic interference (EMI), it's recommended to follow Infineon's application note AN2013-03-001, which provides guidelines for PCB layout, component placement, and routing. Additionally, ensure a solid ground plane, use a low-ESR capacitor for decoupling, and keep the power traces short and wide.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider adding a fuse or a current-limiting resistor in series with the device to prevent damage from excessive current.
  • The recommended gate drive voltage for the IPD30N03S2L-20 is between 10 V and 15 V, with a maximum current of 2 A. It's essential to use a gate driver with a suitable output voltage and current capability to ensure proper switching and to prevent damage to the device.

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