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IPD30N03S4L-14 - Infineon

Description: Infineon IPD30N03S4L-14 N-channel MOSFET Transistor, 30 A, 30 V, 31W , 3-Pin TO-252 , -55°C ~ +175°C

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PCB Footprints
IPD30N03S4L-14 - Infineon PCB footprint - Other - Other - PG-TO252-3-11_2026
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3D Models
IPD30N03S4L-14 - Infineon  - 3D model - Other - PG-TO252-3-11_2026
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IPD30N03S4L-14 Details

  • Manufacturer Part Number:

    IPD30N03S4L-14

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    GREEN, PLASTIC, TO-252, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    16 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0136 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD30N03S4L-14 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD30N03S4L-14 is -55°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPD30N03S4L-14 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPD30N03S4L-14 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal management.
  • To protect the IPD30N03S4L-14, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, as well as a fuse or a current limiter.

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IPD30N03S4L-14 Overview

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Part Image IPD30N03S4L14ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 30V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252