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IPD30N06S2L-13 - Infineon

Description: N-Channel 55 V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

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IPD30N06S2L-13 - Infineon PCB footprint - Other - Other - IPD30N06S2L-13-3
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IPD30N06S2L-13 Details

  • Manufacturer Part Number:

    IPD30N06S2L-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD30N06S2L-13 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD30N06S2L-13 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended gate resistor value for the IPD30N06S2L-13 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPD30N06S2L-13 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and PCB layout to ensure reliable operation.
  • To protect the IPD30N06S2L-13 from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the application design.

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IPD30N06S2L-13 Overview

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Part Image IPD30N06S2L13ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image SPD30N06S2L-13 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252