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IPD30N06S2L23ATMA3 - Infineon

Description: INFINEON - IPD30N06S2L23ATMA3 - Power MOSFET, N Channel, 55 V, 30 A, 0.0159 ohm, TO-252 (DPAK), Surface Mount

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IPD30N06S2L23ATMA3 - Infineon - PCB symbol
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IPD30N06S2L23ATMA3 - Infineon PCB footprint - Other - Other - IPD30N06S2L23ATMA3-1
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IPD30N06S2L23ATMA3 - Infineon - 3D model - Other - IPD30N06S2L23ATMA3-1
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IPD30N06S2L23ATMA3 Details

  • Manufacturer Part Number:

    IPD30N06S2L23ATMA3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-252-3-11, 3/2 PIN

  • Country Of Origin:

    Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD30N06S2L23ATMA3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD30N06S2L-23ATMA3 is -55°C to 175°C.
  • To ensure fast switching, use a gate driver with a high current capability and a low output impedance. Also, ensure the gate-source voltage is sufficient (typically 10-15V) and the gate resistance is minimized.
  • Use a compact layout with short leads and a low-inductance path for the drain and source connections. Keep the gate trace short and away from noise sources. Use a ground plane to reduce electromagnetic interference (EMI).
  • Use a voltage clamp or a zener diode to protect against overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can improve switching speed, but increases power consumption.

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IPD30N06S2L23ATMA3 Overview

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