Part Image

IPD30N08S2-22 - Infineon

Description: Infineon IPD30N08S2-22 N-channel MOSFET Transistor, 30 A, 75 V, 3-Pin TO-252

Download IPD30N08S2-22 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IPD30N08S2-22 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IPD30N08S2-22 Details

  • Manufacturer Part Number:

    IPD30N08S2-22

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0215 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD30N08S2-22 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD30N08S2-22 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the device. Additionally, consider the airflow and thermal management of the surrounding environment.
  • For optimal performance, it's recommended to follow a 4-layer PCB layout with a dedicated power plane, a dedicated ground plane, and two signal layers. Ensure the device's pins are connected to the power plane and ground plane using vias, and keep the signal traces as short as possible to minimize parasitic inductance.
  • To protect the device from overvoltage, consider using a voltage regulator or a transient voltage suppressor (TVS) diode. For overcurrent protection, use a current sense resistor and a fuse or a current limiting circuit. Additionally, ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IPD30N08S2-22 is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IPD30N08S2-22 Overview

Use the download button to access the IPD30N08S2-22 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IPD30, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPD30N08S2-22

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IPD30N08S2-22 Alternates

Showing results

Image Part Number Model
Part Image IPD30N08S222ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 75V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252