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IPD30N10S3L34ATMA1 - Infineon

Description: MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T

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IPD30N10S3L34ATMA1 Details

  • Manufacturer Part Number:

    IPD30N10S3L34ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-252-3-11, 3/2 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    138 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0418 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    68 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD30N10S3L34ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD30N10S3L34ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPD30N10S3L34ATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, IPD30N10S3L34ATMA1 is suitable for high-reliability applications, as it is designed and manufactured with high-reliability processes and materials.
  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

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IPD30N10S3L34ATMA1 Overview

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Part Image IPD30N10S3L-34 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252