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IPD30N10S3L34ATMA2 - Infineon

Description: N-Channel 100 V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

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IPD30N10S3L34ATMA2 Details

  • Manufacturer Part Number:

    IPD30N10S3L34ATMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-252-3-11, 3/2 PIN

  • Country Of Origin:

    Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    138 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0418 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    68 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD30N10S3L34ATMA2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD30N10S3L34ATMA2 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
  • To ensure the reliability and longevity of the IPD30N10S3L34ATMA2, it's crucial to follow proper handling, storage, and soldering guidelines. Additionally, operating the device within its specified ratings, using adequate cooling, and minimizing electrical stress can help prolong its lifespan.
  • Infineon provides a recommended PCB layout and thermal design guide for the IPD30N10S3L34ATMA2 in their application notes and evaluation boards. It's essential to follow these guidelines to ensure optimal thermal performance and minimize thermal resistance.
  • Yes, the IPD30N10S3L34ATMA2 is suitable for high-reliability and automotive applications. Infineon provides AEC-Q101 qualified devices, which meet the stringent requirements for automotive applications. However, it's essential to consult with Infineon's technical support and review the device's qualification data to ensure it meets the specific application requirements.
  • Infineon provides troubleshooting guides and application notes that can help identify and resolve common issues with the IPD30N10S3L34ATMA2. Additionally, consulting with Infineon's technical support or seeking assistance from experienced engineers can help diagnose and fix problems.

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IPD30N10S3L34ATMA2 Overview

Use the download button to access the IPD30N10S3L34ATMA2 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image IPD30N10S3L-34 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252