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IPD40DP06NMATMA1 - Infineon

Description: INFINEON - IPD40DP06NMATMA1 - Power MOSFET, P Channel, 60 V, 4.3 A, 0.328 ohm, TO-252 (DPAK), Surface Mount

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IPD40DP06NMATMA1 - Infineon PCB footprint - Other - Other - IPD40DP06NMATMA1-1
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IPD40DP06NMATMA1 Details

  • Manufacturer Part Number:

    IPD40DP06NMATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    17.2 A

  • Reference Standard:

    IEC-68-1; IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD40DP06NMATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and consider derating the device's current rating according to the temperature derating curve provided in the datasheet.
  • The maximum allowed voltage spike or transient on the drain-source pins is not explicitly stated in the datasheet, but as a general rule, it's recommended to limit voltage transients to 10-20% above the maximum rated voltage to prevent damage to the device.
  • While the IPD40DP06NMATMA1 is a power MOSFET, it's not optimized for high-frequency switching applications. For such applications, Infineon recommends using their OptiMOS or CoolMOS families, which are specifically designed for high-frequency switching.
  • The recommended gate drive voltage is typically between 10-15V, and the recommended gate current is dependent on the specific application and switching frequency. A general rule of thumb is to use a gate current of 1-2A for optimal switching performance.

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