IPD40 Model Download Search Results
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IPD40DP06NMATMA1
Infineon
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1 | INFINEON - IPD40DP06NMATMA1 - Power MOSFET, P Channel, 60 V, 4.3 A, 0.328 ohm, TO-252 (DPAK), Surface Mount | Other | IPD40DP06NMATMA1 |
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IPD40N03S4L08ATMA1
Infineon
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1 | IPD40N03S4L08ATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon | Other | IPD40N03S4L08ATMA1 |
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IPD40N03S4L-08
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD40N03S4L-08 |
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IPD400N06NGBTMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 27A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD400N06NGBTMA1 |
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IPD400N06NGXT
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 27A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD400N06NGXT |
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IPD40DP06NM
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD40DP06NM |
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IPD400N06NG
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 27A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD400N06NG |
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![Part Image](["https://componentsearchengine.com/Images/1/IPD40DP06NMATMA1.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/IPD40N03S4L08ATMA1.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_4.jpg"])
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