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IPD40N03S4L08ATMA1 - Infineon

Description: IPD40N03S4L08ATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon

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IPD40N03S4L08ATMA1 - Infineon PCB footprint - Other - Other - IPD40N03S4L08ATMA1-2
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IPD40N03S4L08ATMA1 Details

  • Manufacturer Part Number:

    IPD40N03S4L08ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC PACKAGE-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    23 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0083 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

IPD40N03S4L08ATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IPD40N03S4L08ATMA1 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • To ensure the reliability of IPD40N03S4L08ATMA1 in high-temperature applications, it's crucial to follow the recommended operating temperature range of -40°C to 150°C. Additionally, ensure proper thermal management by providing adequate heat sinking, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage spike for IPD40N03S4L08ATMA1 is 40V. Exceeding this voltage can cause damage to the device. It's essential to ensure that the voltage supply is within the recommended range and to provide adequate protection against voltage spikes and transients.
  • Yes, IPD40N03S4L08ATMA1 is suitable for high-frequency switching applications up to 100kHz. However, it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and to ensure that the device is properly driven to prevent excessive switching losses.
  • To calculate the power dissipation of IPD40N03S4L08ATMA1, you need to consider the device's on-state resistance (Rds(on)), the drain-source voltage (Vds), and the drain current (Id). The power dissipation can be calculated using the formula: Pd = Rds(on) x Id^2. Additionally, you should also consider the thermal resistance (Rth) and the maximum junction temperature (Tj) to ensure that the device operates within its thermal limits.

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IPD40N03S4L08ATMA1 Overview

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