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IPD60R360P7ATMA1 - Infineon

Description: N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3

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PCB Footprints
IPD60R360P7ATMA1 - Infineon PCB footprint - Other - Other - PG-TO252-3-342
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IPD60R360P7ATMA1 - Infineon  - 3D model - Other - PG-TO252-3-342
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IPD60R360P7ATMA1 Details

  • Manufacturer Part Number:

    IPD60R360P7ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    27 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD60R360P7ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD60R360P7ATMA1 is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities at high temperatures.
  • The recommended PCB layout and thermal design for the IPD60R360P7ATMA1 can be found in the Infineon application note AN2013-01, which provides guidelines for optimal thermal performance and PCB design.
  • The gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10 Ω to 100 Ω. However, it is recommended to consult the Infineon application note AN2013-01 for more detailed guidance.
  • The IPD60R360P7ATMA1 has an integrated ESD protection circuit, but it is still recommended to follow proper ESD handling and storage procedures to prevent damage. Additionally, it is recommended to use ESD protection devices on the PCB to protect the device from external ESD events.

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