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IPD60R360P7
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD60R360P7 |
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IPD60R360P7SAUMA1
Infineon
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1 | N-Channel 600 V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3 | Other | IPD60R360P7SAUMA1 |
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IPD60R360P7ATMA1
Infineon
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1 | N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3 | Other | IPD60R360P7ATMA1 |
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IPD60R360P7S
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD60R360P7S |
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