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IPD650P06NMATMA1 - Infineon

Description: MOSFET TRENCH 40<-<100V

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IPD650P06NMATMA1 - Infineon - PCB symbol
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IPD650P06NMATMA1 - Infineon PCB footprint - Other - Other - PG-TO252-3-313_FFW_1
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IPD650P06NMATMA1 - Infineon - 3D model - Other - PG-TO252-3-313_FFW_1
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IPD650P06NMATMA1 Details

  • Manufacturer Part Number:

    IPD650P06NMATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    329 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    88 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD650P06NMATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD650P06NMATMA1 is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities at high temperatures.
  • The recommended PCB layout and thermal design for the IPD650P06NMATMA1 involves using a multi-layer PCB with a solid ground plane, placing thermal vias under the device, and using a heat sink or thermal interface material to dissipate heat.
  • To handle the high current handling capabilities of the IPD650P06NMATMA1, it is recommended to use wide traces, multiple vias, and a solid power plane to minimize resistance and inductance, and to ensure that the PCB can handle the high currents.
  • The IPD650P06NMATMA1 has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures during assembly and testing, and to use ESD protection devices such as TVS diodes or ESD suppressors in the system design.

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IPD650P06NMATMA1 Overview

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