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IPD65R190C7ATMA1 - Infineon

Description: N-Channel 650 V 13A (Tc) 72W (Tc) Surface Mount PG-TO252-3 , 190mOhm , 4V @ 290µA , -55°C ~ 150°C (TJ)

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IPD65R190C7ATMA1 - Infineon  - 3D model
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IPD65R190C7ATMA1 Details

  • Manufacturer Part Number:

    IPD65R190C7ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    49 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD65R190C7ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD65R190C7ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • A recommended PCB layout for IPD65R190C7ATMA1 includes a solid ground plane, wide power traces, and a decoupling capacitor of at least 10uF placed close to the device.
  • Yes, IPD65R190C7ATMA1 is suitable for high-reliability applications, but it's recommended to follow Infineon's guidelines for high-reliability design and manufacturing.
  • The device requires a specific power sequencing order, which is VCC before VGS. A soft-start circuit can be used to ensure proper power sequencing.

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IPD65R190C7ATMA1 Overview

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Part Image IPD65R190C7 Infineon Technologies AG

Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252